
HCI2012F-2N2S TAI-TECH Advanced Electronics Co., Ltd.

Description: IND 2.2NH 0.1OHM 300MA
Packaging: Cut Tape (CT)
Tolerance: ±0.3nH
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Multilayer
Operating Temperature: -40°C ~ 85°C
DC Resistance (DCR): 100mOhm Max
Q @ Freq: 10 @ 100MHz
Frequency - Self Resonant: 6GHz
Material - Core: Ceramic
Inductance Frequency - Test: 100 MHz
Supplier Device Package: 0805
Height - Seated (Max): 0.041" (1.05mm)
Inductance: 2.2 nH
Current Rating (Amps): 300 mA
auf Bestellung 3744 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
100+ | 0.18 EUR |
244+ | 0.07 EUR |
272+ | 0.07 EUR |
293+ | 0.06 EUR |
316+ | 0.06 EUR |
349+ | 0.05 EUR |
500+ | 0.05 EUR |
1000+ | 0.04 EUR |
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Technische Details HCI2012F-2N2S TAI-TECH Advanced Electronics Co., Ltd.
Description: IND 2.2NH 0.1OHM 300MA, Packaging: Tape & Reel (TR), Tolerance: ±0.3nH, Package / Case: 0805 (2012 Metric), Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm), Mounting Type: Surface Mount, Shielding: Unshielded, Type: Multilayer, Operating Temperature: -40°C ~ 85°C, DC Resistance (DCR): 100mOhm Max, Q @ Freq: 10 @ 100MHz, Frequency - Self Resonant: 6GHz, Material - Core: Ceramic, Inductance Frequency - Test: 100 MHz, Supplier Device Package: 0805, Height - Seated (Max): 0.041" (1.05mm), Inductance: 2.2 nH, Current Rating (Amps): 300 mA.
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HCI2012F-2N2S | Hersteller : TAI-TECH Advanced Electronics Co., Ltd. |
![]() Packaging: Tape & Reel (TR) Tolerance: ±0.3nH Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Multilayer Operating Temperature: -40°C ~ 85°C DC Resistance (DCR): 100mOhm Max Q @ Freq: 10 @ 100MHz Frequency - Self Resonant: 6GHz Material - Core: Ceramic Inductance Frequency - Test: 100 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.041" (1.05mm) Inductance: 2.2 nH Current Rating (Amps): 300 mA |
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