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HDBL106G Taiwan Semiconductor Corporation

HDBL101G SERIES_G2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 800 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
50+0.83 EUR
100+0.75 EUR
500+0.59 EUR
1000+0.54 EUR
2000+0.5 EUR
5000+0.46 EUR
Mindestbestellmenge: 11
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Technische Details HDBL106G Taiwan Semiconductor Corporation

Description: BRIDGE RECT 1PHASE 800V 1A DBL, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 5 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Average Rectified (Io): 1 A, Voltage - Peak Reverse (Max): 800 V, Grade: Automotive, Supplier Device Package: DBL, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Tube.

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HDBL106G HDBL106G Hersteller : Taiwan Semiconductor HDBL101G SERIES_G2103.pdf Bridge Rectifiers 75ns, 1A, 800V, High Efficient Recovery Bridge Rectifier
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