HER101G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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Technische Details HER101G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO204AL, Packaging: Tape & Reel (TR), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 50 V.
Weitere Produktangebote HER101G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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HER101G | Hersteller : Taiwan Semiconductor | Rectifiers 50ns, 1A, 50V, High Efficient Recovery Rectifier |
Produkt ist nicht verfügbar |
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HER101G | Hersteller : YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1V; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Kind of package: tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1V Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |


