HER3003PT

HER3003PT Taiwan Semiconductor Corporation



Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 30A 200V TO3P
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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Technische Details HER3003PT Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 30A 200V TO3P, Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-247AD (TO-3P), Current - Average Rectified (Io) (per Diode): 30A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.

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HER3003PT HER3003PT Hersteller : Taiwan Semiconductor Rectifiers 50ns, 30A, 200V, High Efficient Recovery Rectifier
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Im Einkaufswagen  Stück im Wert von  UAH