HER302GH Taiwan Semiconductor
auf Bestellung 2498 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.33 EUR |
| 46+ | 1.15 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.62 EUR |
| 1250+ | 0.5 EUR |
| 2500+ | 0.45 EUR |
| 10000+ | 0.4 EUR |
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Technische Details HER302GH Taiwan Semiconductor
Description: 50NS, 3A, 100V, HIGH EFFICIENT R, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote HER302GH
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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HER302GH | Hersteller : Taiwan Semiconductor Corporation |
 Description: 50NS, 3A, 100V, HIGH EFFICIENT RPackaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Qualification: AEC-Q101 |
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