HER306G

HER306G Taiwan Semiconductor Corporation


HER301G SERIES_I2105.pdf Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1250+0.35 EUR
2500+ 0.31 EUR
Mindestbestellmenge: 1250
Produktrezensionen
Produktbewertung abgeben

Technische Details HER306G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 600V 3A DO201AD, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Capacitance @ Vr, F: 35pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.

Weitere Produktangebote HER306G nach Preis ab 0.16 EUR bis 0.92 EUR

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Preis ohne MwSt
HER306G HER306G Hersteller : Taiwan Semiconductor Corporation HER301G SERIES_I2105.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.92 EUR
23+ 0.78 EUR
100+ 0.54 EUR
500+ 0.43 EUR
Mindestbestellmenge: 20
HER306G Hersteller : Yangjie Electronic Technology HER301G SERIES_I2105.pdf High Efficient Rectifier
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1250+0.16 EUR
Mindestbestellmenge: 1250
HER306G HER306G Hersteller : YANGJIE TECHNOLOGY HER301G_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 125A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
HER306G HER306G Hersteller : Taiwan Semiconductor HER301G SERIES_I2105.pdf Rectifiers 75ns, 3A, 600V, High Efficient Recovery Rectifier
Produkt ist nicht verfügbar
HER306G HER306G Hersteller : YANGJIE TECHNOLOGY HER301G_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 125A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Produkt ist nicht verfügbar