Technische Details HER306GT-G Comchip Technology
Description: DIODE GEN PURP 600V 3A DO27, Packaging: Tape & Reel (TR), Package / Case: DO-201AA, DO-27, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-27, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.
Weitere Produktangebote HER306GT-G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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HER306GT-G | Hersteller : Comchip Technology |
 Rectifier Diode Switching 600V 3A 75ns 2-Pin DO-27 T/R |
Produkt ist nicht verfügbar |
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HER306GT-G | Hersteller : Comchip Technology |
Rectifier Diode Switching 600V 3A 75ns 2-Pin DO-27 T/R |
Produkt ist nicht verfügbar |
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| HER306GT-G | Hersteller : Comchip Technology |
Description: DIODE GEN PURP 600V 3A DO27 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-27 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |