HER602G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A R-6
Mounting Type: Through Hole
Package / Case: R-6, Axial
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produktrezensionen
Produktbewertung abgeben
Technische Details HER602G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A R-6, Mounting Type: Through Hole, Package / Case: R-6, Axial, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: R-6, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Current - Reverse Leakage @ Vr: 10 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Packaging: Tape & Reel (TR), Speed: Fast Recovery =< 500ns, > 200mA (Io).
Weitere Produktangebote HER602G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
HER602G | Hersteller : Taiwan Semiconductor |
Rectifiers 6.0 Amp 100 Volt 150 Amp IFSM |
Produkt ist nicht verfügbar |