HER602GH Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 2.82 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.16 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.76 EUR |
| 2000+ | 0.72 EUR |
| 5000+ | 0.71 EUR |
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Technische Details HER602GH Taiwan Semiconductor
Description: DIODE STANDARD 100V 6A R6, Packaging: Tape & Reel (TR), Package / Case: R-6, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: R-6, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote HER602GH
| Foto | Bezeichnung | Hersteller | Beschreibung |
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HER602GH | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE STANDARD 100V 6A R6Packaging: Tape & Reel (TR) Package / Case: R-6, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Qualification: AEC-Q101 |
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