HERF1006G

HERF1006G Taiwan Semiconductor Corporation


HERF1001G SERIES_I2105.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 10A ITO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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Technische Details HERF1006G Taiwan Semiconductor Corporation

Description: DIODE ARRAY GP 600V 10A ITO220AB, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Discontinued at Digi-Key, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: ITO-220AB, Current - Average Rectified (Io) (per Diode): 10A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 80 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.

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HERF1006G HERF1006G Hersteller : Taiwan Semiconductor HERF1001G SERIES_I2105.pdf Rectifiers 80ns, 10A, 600V, High Efficient Recovery Rectifier
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