HERF1007G Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 1.51 EUR |
| 10+ | 1.01 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.65 EUR |
| 5000+ | 0.58 EUR |
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Technische Details HERF1007G Taiwan Semiconductor
Description: DIODE ARRAY GP 800V 10A ITO220AB, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 80 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: ITO-220AB, Current - Average Rectified (Io) (per Diode): 10A.
Weitere Produktangebote HERF1007G nach Preis ab 0.86 EUR bis 1.67 EUR
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HERF1007G | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE ARRAY GP 800V 10A ITO220ABDiode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 80 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 10A |
auf Bestellung 964 Stücke: Lieferzeit 10-14 Tag (e) |
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