HERF1008GAH Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 3+ | 1.03 EUR |
| 10+ | 0.94 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.69 EUR |
| 2500+ | 0.58 EUR |
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Technische Details HERF1008GAH Taiwan Semiconductor
Description: DIODE STD 1000V 10A ITO220AB, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: ITO-220AB, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 40pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 80 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.
Weitere Produktangebote HERF1008GAH
| Foto | Bezeichnung | Hersteller | Beschreibung |
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HERF1008GAH | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE STD 1000V 10A ITO220ABQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 40pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 80 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
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