HERF1008GH

HERF1008GH Taiwan Semiconductor Corporation


HERF1001G SERIES_I2105.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR GP 1000V 10A ITO220AB
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
auf Bestellung 1000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
14+1.31 EUR
100+0.88 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 9
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Technische Details HERF1008GH Taiwan Semiconductor Corporation

Description: DIODE ARR GP 1000V 10A ITO220AB, Reverse Recovery Time (trr): 80 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: ITO-220AB, Current - Average Rectified (Io) (per Diode): 10A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard.

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HERF1008GH HERF1008GH Hersteller : Taiwan Semiconductor HERF1001G SERIES_I2105.pdf Rectifiers 80ns, 10A, 1000V, High Efficient Recovery Rectifier
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