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HGT1S12N60C3DS

HGT1S12N60C3DS Fairchild Semiconductor

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Hersteller: Fairchild Semiconductor
Description: IGBT 600V 24A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 32 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-263AB
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
126+3.56 EUR
Mindestbestellmenge: 126
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Technische Details HGT1S12N60C3DS Fairchild Semiconductor

Description: IGBT 600V 24A TO-263AB, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 32 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A, Supplier Device Package: TO-263AB, Gate Charge: 71 nC, Part Status: Active, Current - Collector (Ic) (Max): 24 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 104 W.

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