HGT1S12N60C3DS Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: IGBT 600V 24A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 32 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-263AB
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 152+ | 3.06 EUR |
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Technische Details HGT1S12N60C3DS Fairchild Semiconductor
Description: IGBT 600V 24A TO-263AB, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 32 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A, Supplier Device Package: TO-263AB, Gate Charge: 71 nC, Part Status: Active, Current - Collector (Ic) (Max): 24 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 104 W.
Weitere Produktangebote HGT1S12N60C3DS
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| HGT1S12N60C3DS | Hersteller : ONSEMI |
Description: ONSEMI - HGT1S12N60C3DS - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 565 Stücke: Lieferzeit 14-21 Tag (e) |
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| HGT1S12N60C3DS | Hersteller : onsemi / Fairchild |
IGBT Transistors |
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