HGTG11N120CN ON Semiconductor
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 158+ | 3.49 EUR |
| 500+ | 3.19 EUR |
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Technische Details HGTG11N120CN ON Semiconductor
Description: IGBT NPT 1200V 43A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/180ns, Switching Energy: 400µJ (on), 1.3mJ (off), Test Condition: 960V, 11A, 10Ohm, 15V, Gate Charge: 100 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 43 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 298 W.
Weitere Produktangebote HGTG11N120CN nach Preis ab 3.49 EUR bis 3.79 EUR
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HGTG11N120CN | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 1200V 43A 298W 3-Pin(3+Tab) TO-247 Rail |
auf Bestellung 243 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTG11N120CN | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 43A 298W 3-Pin(3+Tab) TO-247 Rail |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTG11N120CN | Hersteller : Fairchild Semiconductor |
Description: IGBT NPT 1200V 43A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A Supplier Device Package: TO-247 IGBT Type: NPT Td (on/off) @ 25°C: 23ns/180ns Switching Energy: 400µJ (on), 1.3mJ (off) Test Condition: 960V, 11A, 10Ohm, 15V Gate Charge: 100 nC Part Status: Obsolete Current - Collector (Ic) (Max): 43 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 298 W |
auf Bestellung 971 Stücke: Lieferzeit 10-14 Tag (e) |
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| HGTG11N120CN | Hersteller : ONSEMI |
Description: ONSEMI - HGTG11N120CN - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTG11N120CN | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Rail |
Produkt ist nicht verfügbar |
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HGTG11N120CN | Hersteller : onsemi |
Description: IGBT NPT 1200V 43A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A Supplier Device Package: TO-247-3 IGBT Type: NPT Td (on/off) @ 25°C: 23ns/180ns Switching Energy: 400µJ (on), 1.3mJ (off) Test Condition: 960V, 11A, 10Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 43 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 298 W |
Produkt ist nicht verfügbar |
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HGTG11N120CN | Hersteller : onsemi / Fairchild |
IGBT Transistors 43A 1200V N-Ch |
Produkt ist nicht verfügbar |