HGTP12N60A4D ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 192+ | 3.42 EUR |
| 500+ | 3.19 EUR |
| 1000+ | 2.94 EUR |
| 10000+ | 2.7 EUR |
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Technische Details HGTP12N60A4D ON Semiconductor
Description: IGBT 600V 54A TO-220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 30 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 17ns/96ns, Switching Energy: 55µJ (on), 50µJ (off), Test Condition: 390V, 12A, 10Ohm, 15V, Gate Charge: 78 nC, Part Status: Active, Current - Collector (Ic) (Max): 54 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 167 W.
Weitere Produktangebote HGTP12N60A4D nach Preis ab 2.7 EUR bis 3.63 EUR
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HGTP12N60A4D | ON Semiconductor |
 Trans IGBT Chip N-CH 600V 54A 167W 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 11800 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTP12N60A4D | Fairchild Semiconductor |
Description: IGBT 600V 54A TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 17ns/96ns Switching Energy: 55µJ (on), 50µJ (off) Test Condition: 390V, 12A, 10Ohm, 15V Gate Charge: 78 nC Part Status: Active Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 167 W |
auf Bestellung 74846 Stücke: Lieferzeit 10-14 Tag (e) |
|
| HGTP12N60A4D |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 54A 167W 3-Pin(3+Tab) TO-220 Tube
Trans IGBT Chip N-CH 600V 54A 167W 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 11800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 192+ | 3.42 EUR |
| 500+ | 3.19 EUR |
| 1000+ | 2.94 EUR |
| 10000+ | 2.7 EUR |
| HGTP12N60A4D |
|
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 54A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
Description: IGBT 600V 54A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
auf Bestellung 74846 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 3.63 EUR |