Produkte > FAIRCHILD SEMICONDUCTOR > HGTP12N60A4D
HGTP12N60A4D

HGTP12N60A4D Fairchild Semiconductor

FAIR-S-A0000012348-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
auf Bestellung 76616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
165+3 EUR
Mindestbestellmenge: 165
Produktrezensionen
Produktbewertung abgeben

Technische Details HGTP12N60A4D Fairchild Semiconductor

Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 30 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 17ns/96ns, Switching Energy: 55µJ (on), 50µJ (off), Test Condition: 390V, 12A, 10Ohm, 15V, Gate Charge: 78 nC, Part Status: Active, Current - Collector (Ic) (Max): 54 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 167 W.

Weitere Produktangebote HGTP12N60A4D

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
HGTP12N60A4D HGTP12N60A4D Hersteller : ON Semiconductor hgt1s12n60a4ds-d.pdf Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar