HGTP20N35G3VL

HGTP20N35G3VL Fairchild Semiconductor


FAIRS21674-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: IGBT, 20A, 320V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2.8V @ 5V, 20A
Supplier Device Package: TO-220AB
Gate Charge: 28.7 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 380 V
Power - Max: 150 W
auf Bestellung 326 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
202+2.5 EUR
Mindestbestellmenge: 202
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details HGTP20N35G3VL Fairchild Semiconductor

Description: IGBT, 20A, 320V, N-CHANNEL, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Logic, Vce(on) (Max) @ Vge, Ic: 2.8V @ 5V, 20A, Supplier Device Package: TO-220AB, Gate Charge: 28.7 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 380 V, Power - Max: 150 W.

Weitere Produktangebote HGTP20N35G3VL

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HGTP20N35G3VL Hersteller : ONSEMI FAIRS21674-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - HGTP20N35G3VL - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 326 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH