HGTP7N60A4 ON Semiconductor
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 205+ | 2.69 EUR |
| 500+ | 2.33 EUR |
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Technische Details HGTP7N60A4 ON Semiconductor
Description: IGBT 600V 34A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 11ns/100ns, Switching Energy: 55µJ (on), 60µJ (off), Test Condition: 390V, 7A, 25Ohm, 15V, Gate Charge: 37 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 34 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 125 W.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| HGTP7N60A4 | Hersteller : fairchild |
 2011+ |
auf Bestellung 13 Stücke: Lieferzeit 21-28 Tag (e) |
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HGTP7N60A4 | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube |
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HGTP7N60A4 | Hersteller : onsemi |
Description: IGBT 600V 34A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 11ns/100ns Switching Energy: 55µJ (on), 60µJ (off) Test Condition: 390V, 7A, 25Ohm, 15V Gate Charge: 37 nC Part Status: Obsolete Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 125 W |
Produkt ist nicht verfügbar |
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HGTP7N60A4 | Hersteller : onsemi / Fairchild |
IGBTs 600V N-Channel IGBT SMPS Series |
Produkt ist nicht verfügbar |