auf Bestellung 2091 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.29 EUR |
| 10+ | 6.53 EUR |
| 100+ | 5.35 EUR |
| 250+ | 5.09 EUR |
| 500+ | 4.56 EUR |
| 980+ | 3.85 EUR |
| 2940+ | 3.64 EUR |
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Technische Details HIP2100EIBZ Renesas / Intersil
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Voltage - Supply: 9V ~ 14V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 114 V, Supplier Device Package: 8-SOIC-EP, Rise / Fall Time (Typ): 10ns, 10ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: MOSFET (N-Channel), Logic Voltage - VIL, VIH: 4V, 7V, Current - Peak Output (Source, Sink): 2A, 2A, Part Status: Active, DigiKey Programmable: Not Verified.
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HIP2100EIBZ Produktcode: 178051
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| HIP2100EIBZ | Hersteller : Intersil |
EPSOIC 8/A°/100V/2A Peak, Low Cost, High Frequency Half Bridge Driver HIP2100 Anzahl je Verpackung: 98 Stücke |
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HIP2100EIBZ | Hersteller : Renesas Electronics Corporation |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 9V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 114 V Supplier Device Package: 8-SOIC-EP Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 4V, 7V Current - Peak Output (Source, Sink): 2A, 2A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |