HIP2100EIBZT

HIP2100EIBZT Renesas Electronics Corporation


hip2100-datasheet Hersteller: Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 114 V
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 4V, 7V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+3.56 EUR
Mindestbestellmenge: 2500
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Technische Details HIP2100EIBZT Renesas Electronics Corporation

Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Voltage - Supply: 9V ~ 14V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 114 V, Supplier Device Package: 8-SOIC-EP, Rise / Fall Time (Typ): 10ns, 10ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 4V, 7V, Current - Peak Output (Source, Sink): 2A, 2A, DigiKey Programmable: Not Verified.

Weitere Produktangebote HIP2100EIBZT nach Preis ab 3.75 EUR bis 7.09 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
HIP2100EIBZT HIP2100EIBZT Hersteller : Renesas Electronics Corporation hip2100-datasheet Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 114 V
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 4V, 7V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.09 EUR
10+ 6.37 EUR
25+ 6.02 EUR
100+ 5.22 EUR
250+ 4.95 EUR
500+ 4.44 EUR
1000+ 3.75 EUR
Mindestbestellmenge: 3
HIP2100EIBZT HIP2100EIBZT Hersteller : Renesas / Intersil REN_hip2100_DST_20010410-1997760.pdf Gate Drivers 100V H-BRDG DRVR 8LD EP
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