HIP2101EIBZT Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 114 V
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 3.56 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details HIP2101EIBZT Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Voltage - Supply: 9V ~ 14V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 114 V, Supplier Device Package: 8-SOIC-EP, Rise / Fall Time (Typ): 10ns, 10ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.2V, Current - Peak Output (Source, Sink): 2A, 2A, DigiKey Programmable: Not Verified.
Weitere Produktangebote HIP2101EIBZT nach Preis ab 3.57 EUR bis 7.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
HIP2101EIBZT | Hersteller : Renesas Electronics Corporation |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 9V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 114 V Supplier Device Package: 8-SOIC-EP Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 2A, 2A DigiKey Programmable: Not Verified |
auf Bestellung 6247 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
HIP2101EIBZT | Hersteller : Renesas / Intersil |
Gate Drivers 100V H-BRDG DRVR 8LD EP |
auf Bestellung 1039 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| HIP2101EIBZT | Hersteller : Intersil |
EPSOIC 8/A°/100V/2A Peak, Low Cost, High Frequency Half Bridge Driver HIP2 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |