HIP2210FRTZ Renesas / Intersil
auf Bestellung 18051 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.31 EUR |
| 10+ | 2.04 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.81 EUR |
| 750+ | 1.65 EUR |
| 3000+ | 1.63 EUR |
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Technische Details HIP2210FRTZ Renesas / Intersil
Description: 100V/4A PWM INPUT HALF BRIDGE DR, Packaging: Tube, Package / Case: 10-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 6V ~ 18V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 115 V, Supplier Device Package: 10-TDFN (4x4), Rise / Fall Time (Typ): 20ns, 20ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 1.47V, 1.84V, Current - Peak Output (Source, Sink): 3A, 4A.
Weitere Produktangebote HIP2210FRTZ nach Preis ab 1.86 EUR bis 2.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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| HIP2210FRTZ | Hersteller : Renesas Electronics Corporation |
 Description: 100V/4A PWM INPUT HALF BRIDGE DRPackaging: Tube Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 6V ~ 18V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 115 V Supplier Device Package: 10-TDFN (4x4) Rise / Fall Time (Typ): 20ns, 20ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.47V, 1.84V Current - Peak Output (Source, Sink): 3A, 4A |
auf Bestellung 717 Stücke: Lieferzeit 10-14 Tag (e) |
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