Technische Details HIP6601BECB-T INTERSIL
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 0°C ~ 125°C (TJ), Voltage - Supply: 10.8V ~ 13.2V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 15 V, Supplier Device Package: 8-SOIC-EP, Rise / Fall Time (Typ): 20ns, 20ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Part Status: Obsolete, DigiKey Programmable: Not Verified.
Weitere Produktangebote HIP6601BECB-T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| HIP6601BECB-T | Hersteller : INTERSIL |
 0432+ SOP-8 |
auf Bestellung 5732 Stücke: Lieferzeit 21-28 Tag (e) |
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| HIP6601BECB-T | Hersteller : INTERSIL |
2003 SMD8 |
auf Bestellung 2334 Stücke: Lieferzeit 21-28 Tag (e) |
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HIP6601BECB-T | Hersteller : Renesas Electronics America Inc |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C (TJ) Voltage - Supply: 10.8V ~ 13.2V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 15 V Supplier Device Package: 8-SOIC-EP Rise / Fall Time (Typ): 20ns, 20ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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HIP6601BECB-T | Hersteller : Renesas / Intersil |
Gate Drivers |
Produkt ist nicht verfügbar |