Technische Details HIP6603BCB-T
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 0°C ~ 125°C (TJ), Voltage - Supply: 10.8V ~ 13.2V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 15 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 20ns, 20ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, DigiKey Programmable: Not Verified.
Weitere Produktangebote HIP6603BCB-T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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HIP6603BCB-T | Renesas Electronics America Inc |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C (TJ) Voltage - Supply: 10.8V ~ 13.2V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 15 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 20ns, 20ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| HIP6603BCB-T |
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Hersteller: Renesas Electronics America Inc
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 10.8V ~ 13.2V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 15 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 10.8V ~ 13.2V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 15 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


