Technische Details HIP6603BECB ITS
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Tube, DigiKey Programmable: Not Verified, Gate Type: N-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Synchronous, Rise / Fall Time (Typ): 20ns, 20ns, Supplier Device Package: 8-SOIC-EP, High Side Voltage - Max (Bootstrap): 15 V, Input Type: Non-Inverting, Voltage - Supply: 10.8V ~ 13.2V, Operating Temperature: 0°C ~ 125°C (TJ).
Weitere Produktangebote HIP6603BECB
| Foto | Bezeichnung | Hersteller | Beschreibung |
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HIP6603BECB | Renesas Electronics Corporation |
 Description: IC GATE DRVR HALF-BRIDGE 8SOICMounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tube DigiKey Programmable: Not Verified Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 20ns, 20ns Supplier Device Package: 8-SOIC-EP High Side Voltage - Max (Bootstrap): 15 V Input Type: Non-Inverting Voltage - Supply: 10.8V ~ 13.2V Operating Temperature: 0°C ~ 125°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| HIP6603BECB |
|
Hersteller: Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tube
DigiKey Programmable: Not Verified
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 20ns, 20ns
Supplier Device Package: 8-SOIC-EP
High Side Voltage - Max (Bootstrap): 15 V
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 125°C (TJ)
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tube
DigiKey Programmable: Not Verified
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 20ns, 20ns
Supplier Device Package: 8-SOIC-EP
High Side Voltage - Max (Bootstrap): 15 V
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 125°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH