HN1A01FU-GR,LF Toshiba
auf Bestellung 6000 Stücke:
Lieferzeit 294-308 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 86+ | 0.61 EUR |
| 125+ | 0.42 EUR |
| 304+ | 0.17 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.11 EUR |
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Technische Details HN1A01FU-GR,LF Toshiba
Description: TRANS 2PNP 50V 0.15A US6-PLN, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 125°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: US6, Part Status: Active.
Weitere Produktangebote HN1A01FU-GR,LF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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HN1A01FU-GR,LF Produktcode: 196705 |
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HN1A01FU-GR,LF | Hersteller : Toshiba |
Trans GP BJT PNP 50V 0.15A 200mW 6-Pin US T/R |
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HN1A01FU-GR,LF | Hersteller : Toshiba |
Trans GP BJT PNP 50V 0.15A 200mW 6-Pin US T/R |
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HN1A01FU-GR,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 0.15A US6-PLN Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 125°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
Produkt ist nicht verfügbar |
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HN1A01FU-GR,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 0.15A US6-PLN Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 125°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
Produkt ist nicht verfügbar |