Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > HN1C01FU-GR,LF
HN1C01FU-GR,LF

HN1C01FU-GR,LF Toshiba Semiconductor and Storage

HN1C01FU_datasheet_en_20210706.pdf?did=19152&prodName=HN1C01FU Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 1878 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
34+0.78 EUR
48+ 0.55 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 34
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Technische Details HN1C01FU-GR,LF Toshiba Semiconductor and Storage

Description: TRANS 2NPN 50V 0.15A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 125°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: US6, Part Status: Active.

Weitere Produktangebote HN1C01FU-GR,LF nach Preis ab 0.096 EUR bis 0.8 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
HN1C01FU-GR,LF HN1C01FU-GR,LF Hersteller : Toshiba HN1C01FU_datasheet_en_20210706-1627341.pdf Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
auf Bestellung 1264 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
66+0.8 EUR
95+ 0.55 EUR
233+ 0.22 EUR
1000+ 0.16 EUR
3000+ 0.12 EUR
9000+ 0.1 EUR
24000+ 0.096 EUR
Mindestbestellmenge: 66
HN1C01FU-GR,LF
Produktcode: 128730 		HN1C01FU_datasheet_en_20210706.pdf?did=19152&prodName=HN1C01FU Transistoren > Bipolar-Transistoren NPN
Produkt ist nicht verfügbar
HN1C01FU-GR,LF HN1C01FU-GR,LF Hersteller : Toshiba hn1c01fu_datasheet_en_20210706.pdf Trans GP BJT NPN 50V 0.15A 200mW 6-Pin US T/R
Produkt ist nicht verfügbar
HN1C01FU-GR,LF HN1C01FU-GR,LF Hersteller : Toshiba hn1c01fu_datasheet_en_20210706.pdf Trans GP BJT NPN 50V 0.15A 200mW 6-Pin US T/R
Produkt ist nicht verfügbar
HN1C01FU-GR,LF Hersteller : Toshiba hn1c01fu_datasheet_en_20210706.pdf Trans GP BJT NPN 50V 0.15A 200mW 6-Pin US T/R
Produkt ist nicht verfügbar
HN1C01FU-GR,LF HN1C01FU-GR,LF Hersteller : Toshiba Semiconductor and Storage HN1C01FU_datasheet_en_20210706.pdf?did=19152&prodName=HN1C01FU Description: TRANS 2NPN 50V 0.15A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Produkt ist nicht verfügbar