
HN1C01FU-GR,LF Toshiba Semiconductor and Storage

Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
42+ | 0.42 EUR |
71+ | 0.25 EUR |
113+ | 0.16 EUR |
500+ | 0.12 EUR |
1000+ | 0.10 EUR |
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Technische Details HN1C01FU-GR,LF Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 125°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: US6, Part Status: Active.
Weitere Produktangebote HN1C01FU-GR,LF nach Preis ab 0.08 EUR bis 0.43 EUR
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HN1C01FU-GR,LF | Hersteller : Toshiba |
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auf Bestellung 8631 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1C01FU-GR,LF Produktcode: 128730
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HN1C01FU-GR,LF | Hersteller : Toshiba |
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HN1C01FU-GR,LF | Hersteller : Toshiba |
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HN1C01FU-GR,LF | Hersteller : Toshiba |
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HN1C01FU-GR,LF | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 125°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
Produkt ist nicht verfügbar |