HN1D02FU(T5L,F,T) Toshiba Semiconductor and Storage

Description: DIODE ARRAY GP 80V 100MA ES6, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Operating Temperature - Junction: 125°C (Max), Supplier Device Package: ES6, Current - Average Rectified (Io) (per Diode): 100mA, Diode Configuration: 2 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).