HN1D04FUTE85LF Toshiba
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Technische Details HN1D04FUTE85LF Toshiba
Description: DIODE ARRAY GP 80V 100MA US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 1.6 ns, Technology: Standard, Diode Configuration: 2 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 100mA, Supplier Device Package: US6, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V.
Weitere Produktangebote HN1D04FUTE85LF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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HN1D04FUTE85LF | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE ARRAY GP 80V 100MA US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: US6 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
Produkt ist nicht verfügbar |
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HN1D04FUTE85LF | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: US6 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
Produkt ist nicht verfügbar |