Technische Details HN1D04FUTE85LF Toshiba
Description: DIODE ARRAY GP 80V 100MA US6, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: US6, Current - Average Rectified (Io) (per Diode): 100mA, Diode Configuration: 2 Pair Series Connection, Technology: Standard, Reverse Recovery Time (trr): 1.6 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote HN1D04FUTE85LF
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HN1D04FUTE85LF | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE ARRAY GP 80V 100MA US6Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: US6 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 1.6 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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HN1D04FUTE85LF | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA US6 Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: US6 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 1.6 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |