HN2A01FU-Y(TE85L,F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: TRANS 2PNP 50V 0.15A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
auf Bestellung 2298 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 0.77 EUR |
| 34+ | 0.67 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.2 EUR |
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Technische Details HN2A01FU-Y(TE85L,F Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A US6, Packaging: Cut Tape (CT), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 125°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: US6.
Weitere Produktangebote HN2A01FU-Y(TE85L,F nach Preis ab 0.18 EUR bis 1.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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HN2A01FU-Y(TE85L,F | Hersteller : Toshiba |
Bipolar Transistors - BJT Dual Trans PNP x 2 US6, -50V, -0.15A |
auf Bestellung 2252 Stücke: Lieferzeit 14-28 Tag (e) |
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| HN2A01FU-Y(TE85L,F | Hersteller : Toshiba |
Trans GP BJT PNP 50V 0.15A 100mW 6-Pin US T/R |
Produkt ist nicht verfügbar |