HN2A01FU-Y(TE85L,F Toshiba
| Anzahl | Preis |
|---|---|
| 5+ | 0.62 EUR |
| 10+ | 0.38 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 6000+ | 0.15 EUR |
| 24000+ | 0.11 EUR |
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Technische Details HN2A01FU-Y(TE85L,F Toshiba
Description: TRANS 2PNP 50V 0.15A US6, Operating Temperature: 125°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Cut Tape (CT), Supplier Device Package: US6, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 150mA, Power - Max: 200mW.
Weitere Produktangebote HN2A01FU-Y(TE85L,F nach Preis ab 0.16 EUR bis 0.77 EUR
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HN2A01FU-Y(TE85L,F | Toshiba Semiconductor and Storage |
 Description: TRANS 2PNP 50V 0.15A US6Operating Temperature: 125°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: US6 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 200mW |
auf Bestellung 2298 Stücke: Lieferzeit 10-14 Tag (e) |
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| HN2A01FU-Y(TE85L,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A US6
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Description: TRANS 2PNP 50V 0.15A US6
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
auf Bestellung 2298 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 34+ | 0.53 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.16 EUR |