Technische Details HN3A51F(TE85L,F) Toshiba
Description: TRANS 2PNP DUAL 120V 100MA SM6, Supplier Device Package: SM6, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Voltage - Collector Emitter Breakdown (Max): 120V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).
Weitere Produktangebote HN3A51F(TE85L,F)
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HN3A51F(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 2PNP DUAL 120V 100MA SM6 Supplier Device Package: SM6 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 120V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) |
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