HN4A51JTE85LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details HN4A51JTE85LF Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 120V 100MA SMV, Supplier Device Package: SMV, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Voltage - Collector Emitter Breakdown (Max): 120V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: SC-74A, SOT-753, Packaging: Tape & Reel (TR).
Weitere Produktangebote HN4A51JTE85LF nach Preis ab 0.2 EUR bis 1.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HN4A51JTE85LF | Toshiba |
Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A |
auf Bestellung 10921 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
HN4A51JTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP DUAL 120V 100MA SMVSupplier Device Package: SMV Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 120V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
auf Bestellung 7492 Stücke: Lieferzeit 10-14 Tag (e) |
|
| HN4A51JTE85LF |
![]() |
Hersteller: Toshiba
Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
auf Bestellung 10921 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.98 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.21 EUR |
| 9000+ | 0.2 EUR |
| HN4A51JTE85LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 7492 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.13 EUR |
| 30+ | 0.7 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |


