HN4A51JTE85LF Toshiba Semiconductor and Storage


HN4A51J_datasheet_en_20140301.pdf?did=22329&prodName=HN4A51J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.25 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details HN4A51JTE85LF Toshiba Semiconductor and Storage

Description: TRANS 2PNP DUAL 120V 100MA SMV, Supplier Device Package: SMV, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Voltage - Collector Emitter Breakdown (Max): 120V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: SC-74A, SOT-753, Packaging: Tape & Reel (TR).

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HN4A51JTE85LF HN4A51JTE85LF Toshiba HN4A51J_datasheet_en_20140301-1839223.pdf Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
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4+0.98 EUR
10+0.62 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.29 EUR
3000+0.21 EUR
9000+0.2 EUR
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HN4A51JTE85LF HN4A51JTE85LF Toshiba Semiconductor and Storage HN4A51J_datasheet_en_20140301.pdf?did=22329&prodName=HN4A51J Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 7492 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.13 EUR
30+0.7 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN4A51JTE85LF HN4A51J_datasheet_en_20140301-1839223.pdf
Hersteller: Toshiba
Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
auf Bestellung 10921 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+0.98 EUR
10+0.62 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.29 EUR
3000+0.21 EUR
9000+0.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN4A51JTE85LF HN4A51J_datasheet_en_20140301.pdf?did=22329&prodName=HN4A51J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 7492 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.13 EUR
30+0.7 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH