HN4A51JTE85LF Toshiba Semiconductor and Storage


HN4A51J_datasheet_en_20140301.pdf?did=22329&prodName=HN4A51J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details HN4A51JTE85LF Toshiba Semiconductor and Storage

Description: TRANS 2PNP DUAL 120V 100MA SMV, Supplier Device Package: SMV, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Voltage - Collector Emitter Breakdown (Max): 120V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: SC-74A, SOT-753, Packaging: Tape & Reel (TR).

Weitere Produktangebote HN4A51JTE85LF nach Preis ab 0.17 EUR bis 0.95 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HN4A51JTE85LF HN4A51JTE85LF Toshiba HN4A51J_datasheet_en_20140301-1839223.pdf Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
auf Bestellung 10921 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.82 EUR
10+0.52 EUR
100+0.34 EUR
500+0.26 EUR
1000+0.24 EUR
3000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN4A51JTE85LF HN4A51JTE85LF Toshiba Semiconductor and Storage HN4A51J_datasheet_en_20140301.pdf?did=22329&prodName=HN4A51J Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 7492 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
30+0.59 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN4A51JTE85LF HN4A51J_datasheet_en_20140301-1839223.pdf
Hersteller: Toshiba
Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
auf Bestellung 10921 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.82 EUR
10+0.52 EUR
100+0.34 EUR
500+0.26 EUR
1000+0.24 EUR
3000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN4A51JTE85LF HN4A51J_datasheet_en_20140301.pdf?did=22329&prodName=HN4A51J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 7492 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
19+0.95 EUR
30+0.59 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH