HN4B04J(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 30V 0.5A SMV
Part Status: Obsolete
Supplier Device Package: SMV
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 500mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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Technische Details HN4B04J(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 30V 0.5A SMV, Part Status: Obsolete, Supplier Device Package: SMV, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V, Current - Collector Cutoff (Max): 100µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 30V, Current - Collector (Ic) (Max): 500mA, Power - Max: 300mW, Operating Temperature: 150°C (TJ), Transistor Type: 1 NPN, 1 PNP, Mounting Type: Surface Mount, Package / Case: SC-74A, SOT-753, Packaging: Tape & Reel (TR).
Weitere Produktangebote HN4B04J(TE85L,F)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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HN4B04J(TE85L,F) | Toshiba | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| HN4B04J(TE85L,F) |
Hersteller: Toshiba
Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH