Produkte > TOSHIBA > HN4C06J-BL(TE85L,F
HN4C06J-BL(TE85L,F

HN4C06J-BL(TE85L,F Toshiba


HN4C06J_datasheet_en_20140301-1272629.pdf Hersteller: Toshiba
Bipolar Transistors - BJT BJT Trans LFreq 120V NPN NPN 0.1A
auf Bestellung 4449 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.85 EUR
1000+0.66 EUR
3000+0.20 EUR
9000+0.15 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details HN4C06J-BL(TE85L,F Toshiba

Description: TRANS 2NPN 120V 100MA SMV, Packaging: Tape & Reel (TR), Package / Case: SC-74A, SOT-753, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual) Common Emitter, Operating Temperature: 150°C (TJ), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 100MHz, Supplier Device Package: SMV, Part Status: Not For New Designs.

Weitere Produktangebote HN4C06J-BL(TE85L,F

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HN4C06J-BL(TE85L,F) HN4C06J-BL(TE85L,F) Hersteller : Toshiba HN4C06J_datasheet_en_20140301-1272629.pdf Bipolar Transistors - BJT BJT Trans LFreq 120V NPN NPN 0.1A
auf Bestellung 3542 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
HN4C06J-BL(TE85L,F HN4C06J-BL(TE85L,F Hersteller : Toshiba Semiconductor and Storage Description: TRANS 2NPN 120V 100MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN4C06J-BL(TE85L,F HN4C06J-BL(TE85L,F Hersteller : Toshiba Semiconductor and Storage Description: TRANS 2NPN 120V 100MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH