HN4C06J-BL(TE85L,F)
Produktcode: 162574
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Lieblingsprodukt
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Transistoren > Bipolar-Transistoren NPN
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Weitere Produktangebote HN4C06J-BL(TE85L,F) nach Preis ab 0.15 EUR bis 0.85 EUR
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HN4C06J-BL(TE85L,F | Hersteller : Toshiba |
Bipolar Transistors - BJT BJT Trans LFreq 120V NPN NPN 0.1A |
auf Bestellung 4449 Stücke: Lieferzeit 10-14 Tag (e) |
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HN4C06J-BL(TE85L,F) | Hersteller : Toshiba |
Bipolar Transistors - BJT BJT Trans LFreq 120V NPN NPN 0.1A |
auf Bestellung 3542 Stücke: Lieferzeit 10-14 Tag (e) |
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HN4C06J-BL(TE85L,F | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 120V 100MA SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Common Emitter Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SMV Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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HN4C06J-BL(TE85L,F | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 120V 100MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Common Emitter Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SMV |
Produkt ist nicht verfügbar |


