HS1AL RVG Taiwan Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3425+ | 0.051 EUR |
| 5182+ | 0.032 EUR |
| 5236+ | 0.031 EUR |
| 5292+ | 0.03 EUR |
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Technische Details HS1AL RVG Taiwan Semiconductor
Description: DIODE GEN PURP 50V 1A SUB SMA, Current - Reverse Leakage @ Vr: 5 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 50 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Sub SMA, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 20pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote HS1AL RVG nach Preis ab 0.54 EUR bis 1.38 EUR
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HS1AL RVG | Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 50V 1A SUB SMACurrent - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) |
auf Bestellung 1595 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1AL RVG | Taiwan Semiconductor |
Diode Switching 50V 1A 2-Pin Sub SMA T/R |
auf Bestellung 5512 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1042 Stücke Im Einkaufswagen Stück im Wert von UAH |
| HS1AL RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 50V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.38 EUR |
| 18+ | 1.18 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.54 EUR |
| HS1AL RVG |
|
Hersteller: Taiwan Semiconductor
Diode Switching 50V 1A 2-Pin Sub SMA T/R
Diode Switching 50V 1A 2-Pin Sub SMA T/R
auf Bestellung 5512 Stücke:
Lieferzeit 14-21 Tag (e)