HS1DDF-13

HS1DDF-13 Diodes Incorporated


HS1DDF.pdf Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 200V 1A DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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Technische Details HS1DDF-13 Diodes Incorporated

Description: DIODE GEN PURP 200V 1A DFLAT, Packaging: Tape & Reel (TR), Package / Case: 2-SMD, Flat Lead, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 15 ns, Technology: Standard, Capacitance @ Vr, F: 16pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: D-Flat, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.

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HS1DDF-13 HS1DDF-13 Hersteller : Diodes Incorporated DIOD_S_A0004888504_1-2542684.pdf Rectifiers Superfast Recovery Rectifier D-FLAT T&R 10K
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