auf Bestellung 2108 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1303+ | 0.11 EUR |
| 1308+ | 0.1 EUR |
| 1313+ | 0.095 EUR |
| 1316+ | 0.091 EUR |
| 1318+ | 0.087 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details HS1DLW RVG Taiwan Semiconductor
Description: DIODE GEN PURP 200V 1A SOD123W, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 16pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.
Weitere Produktangebote HS1DLW RVG nach Preis ab 0.099 EUR bis 0.11 EUR
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HS1DLW RVG | Hersteller : Taiwan Semiconductor |
 Diode 200V 1A 2-Pin SOD-123W T/R |
auf Bestellung 2108 Stücke: Lieferzeit 14-21 Tag (e) |
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HS1DLW RVG | Hersteller : Taiwan Semiconductor |
Diode 200V 1A 2-Pin SOD-123W T/R |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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HS1DLW RVG | Hersteller : Taiwan Semiconductor |
Diode 200V 1A 2-Pin SOD-123W T/R |
Produkt ist nicht verfügbar |
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HS1DLW RVG | Hersteller : Taiwan Semiconductor |
Diode 200V 1A 2-Pin SOD-123W T/R |
Produkt ist nicht verfügbar |
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HS1DLW RVG | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
Produkt ist nicht verfügbar |
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HS1DLW RVG | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
Produkt ist nicht verfügbar |
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HS1DLW RVG | Hersteller : Taiwan Semiconductor |
Rectifiers 50ns, 1A, 200V, High Efficient Recovery Rectifier |
Produkt ist nicht verfügbar |