HS1JFL Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123F
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.086 EUR |
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Technische Details HS1JFL Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123F, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: SOD-123F, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 6pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123F, Packaging: Tape & Reel (TR).
Weitere Produktangebote HS1JFL nach Preis ab 0.083 EUR bis 0.58 EUR
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HS1JFL | Taiwan Semiconductor |
Rectifiers 75ns, 1A, 600V, High Efficient Recovery Rectifier |
auf Bestellung 12025 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1JFL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SOD123F Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 6pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) |
auf Bestellung 15260 Stücke: Lieferzeit 10-14 Tag (e) |
|
| HS1JFL |
|
Hersteller: Taiwan Semiconductor
Rectifiers 75ns, 1A, 600V, High Efficient Recovery Rectifier
Rectifiers 75ns, 1A, 600V, High Efficient Recovery Rectifier
auf Bestellung 12025 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 0.41 EUR |
| 11+ | 0.26 EUR |
| 100+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.095 EUR |
| 2500+ | 0.092 EUR |
| 5000+ | 0.083 EUR |
| HS1JFL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123F
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 1A SOD123F
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
auf Bestellung 15260 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 44+ | 0.4 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.1 EUR |
| 5000+ | 0.099 EUR |