HS1KL R3G Taiwan Semiconductor
auf Bestellung 1142 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.96 EUR |
| 10+ | 0.73 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.38 EUR |
| 1800+ | 0.33 EUR |
| 3600+ | 0.32 EUR |
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Technische Details HS1KL R3G Taiwan Semiconductor
Description: DIODE GEN PURP 800V 1A SUB SMA, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: Sub SMA, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
Weitere Produktangebote HS1KL R3G
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HS1KL R3G Produktcode: 144480
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Lieblingsprodukt
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 Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle |
Produkt ist nicht verfügbar
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HS1KL R3G | Hersteller : Taiwan Semiconductor |
Diode Switching 800V 1A 2-Pin Sub SMA T/R |
Produkt ist nicht verfügbar |
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HS1KL R3G | Hersteller : Taiwan Semiconductor |
Diode Switching 800V 1A 2-Pin Sub SMA T/R |
Produkt ist nicht verfügbar |
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HS1KL R3G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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HS1KL R3G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1A SUB SMA Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |