HS1MFL Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: DIODE GEN PURP 1KV 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5741 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 42+ | 0.42 EUR |
| 70+ | 0.25 EUR |
| 112+ | 0.16 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| 2000+ | 0.09 EUR |
| 5000+ | 0.078 EUR |
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Technische Details HS1MFL Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123F, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Capacitance @ Vr, F: 6pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123F, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
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