HS2DFS Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A SOD128
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
| Anzahl | Preis |
|---|---|
| 28+ | 0.63 EUR |
| 36+ | 0.49 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |
| 5000+ | 0.16 EUR |
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Technische Details HS2DFS Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A SOD128, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: SOD-128, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 32pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-128, Packaging: Tape & Reel (TR).
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HS2DFS | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A SOD128 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 32pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
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