HS3A V7G Taiwan Semiconductor

Description: DIODE GEN PURP 50V 3A DO214AB, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Cut Tape (CT), Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 50 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 80pF @ 4V, 1MHz.