HS3DB R5G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
| Anzahl | Privatkunde |
|---|---|
| 850+ | 0.64 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
850 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details HS3DB R5G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Weitere Produktangebote HS3DB R5G nach Preis ab 0.38 EUR bis 1.87 EUR
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HS3DB R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 1349 Stücke: Lieferzeit 10-14 Tag (e) |
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| HS3DB R5G | Taiwan Semiconductor |
Rectifier Diode Switching 200V 3A 50ns 2-Pin SMB T/R |
auf Bestellung 1414 Stücke: Lieferzeit 14-21 Tag (e) |
|
| HS3DB R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.87 EUR |
| 17+ | 1.25 EUR |
| 100+ | 0.86 EUR |
| HS3DB R5G |
|
Hersteller: Taiwan Semiconductor
Rectifier Diode Switching 200V 3A 50ns 2-Pin SMB T/R
Rectifier Diode Switching 200V 3A 50ns 2-Pin SMB T/R
auf Bestellung 1414 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 310+ | 0.57 EUR |
| 320+ | 0.54 EUR |
| 322+ | 0.51 EUR |
| 337+ | 0.48 EUR |
| 344+ | 0.44 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |