HS3KB Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
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Technische Details HS3KB Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AA (SMB), Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 50pF @ 4V, 1MHz, Technology: Standard.
Weitere Produktangebote HS3KB nach Preis ab 0.25 EUR bis 0.67 EUR
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HS3KB | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
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