HUF75309D3S Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 55V 19A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 19A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1687 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1025+ | 0.7 EUR |
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Technische Details HUF75309D3S Fairchild Semiconductor
Description: MOSFET N-CH 55V 19A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 19A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote HUF75309D3S nach Preis ab 0.7 EUR bis 0.7 EUR
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HUF75309D3S | Hersteller : Harris Corporation |
Description: MOSFET N-CH 55V 19A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 19A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 15980 Stücke: Lieferzeit 21-28 Tag (e) |
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| HUF75309D3S | Hersteller : FAIRCHILD |
07+ SOT-252 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| HUF75309D3S | Hersteller : FAIRCHILD |
SOT-252 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| HUF75309D3S | Hersteller : FAIRCHILD |
TO-252 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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| HUF75309D3S | Hersteller : ONSEMI |
Description: ONSEMI - HUF75309D3S - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 14180 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75309D3S | Hersteller : ON Semiconductor |
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HUF75309D3S | Hersteller : onsemi / Fairchild |
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