HUF75321S3S Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 55V 35A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 35A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
auf Bestellung 1204 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 575+ | 0.8 EUR |
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Technische Details HUF75321S3S Fairchild Semiconductor
Description: MOSFET N-CH 55V 35A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 35A, 10V, Power Dissipation (Max): 93W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V.
Weitere Produktangebote HUF75321S3S nach Preis ab 0.8 EUR bis 0.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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HUF75321S3S | Hersteller : Harris Corporation |
Description: MOSFET N-CH 55V 35A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 35A, 10V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V |
auf Bestellung 991 Stücke: Lieferzeit 10-14 Tag (e) |
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| HUF75321S3S | Hersteller : HARRIS |
HUF75321S3S |
auf Bestellung 991 Stücke: Lieferzeit 14-21 Tag (e) |
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| HUF75321S3S | Hersteller : FAIRCHILD |
07+ SOT-263 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| HUF75321S3S | Hersteller : FAIRCHILD |
SOT-263 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| HUF75321S3S | Hersteller : FAIRCHILD |
TO-263 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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| HUF75321S3S | Hersteller : ONSEMI |
Description: ONSEMI - HUF75321S3S - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 991 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75321S3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 55V 35A 3-Pin(2+Tab) TO-263AB Rail |
Produkt ist nicht verfügbar |
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HUF75321S3S | Hersteller : onsemi |
Description: MOSFET N-CH 55V 35A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 35A, 10V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V |
Produkt ist nicht verfügbar |
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HUF75321S3S | Hersteller : onsemi / Fairchild |
MOSFETs 20a 55V N-Channel UltraFET |
Produkt ist nicht verfügbar |