HUF75329P3 Harris Corporation

Description: MOSFET N-CH 55V 49A TO220-3, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 128W (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V, Package / Case: TO-220-3, Packaging: Tube.