| Anzahl | Preis |
|---|---|
| 466+ | 0.93 EUR |
| 518+ | 0.81 EUR |
| 1000+ | 0.72 EUR |
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Technische Details HUF75332S3S HARRIS
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V.
Weitere Produktangebote HUF75332S3S nach Preis ab 0.81 EUR bis 0.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| HUF75332S3S | Hersteller : HARRIS |
 HUF75332S3S |
auf Bestellung 637 Stücke: Lieferzeit 14-21 Tag (e) |
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| HUF75332S3S | Hersteller : Harris Corporation |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
auf Bestellung 2788 Stücke: Lieferzeit 10-14 Tag (e) |
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| HUF75332S3S | Hersteller : FAIRCHILD |
07+ SOT-263 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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HUF75332S3S | Hersteller : onsemi / Fairchild |
MOSFET DISC BY MFG 2/02 |
Produkt ist nicht verfügbar |