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HUF75631S3ST

HUF75631S3ST Fairchild Semiconductor

FAIRS45735-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 33A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
auf Bestellung 321 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
138+5.36 EUR
Mindestbestellmenge: 138
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Technische Details HUF75631S3ST Fairchild Semiconductor

Description: MOSFET N-CH 100V 33A D2PAK, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 33A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V.

Weitere Produktangebote HUF75631S3ST nach Preis ab 5.02 EUR bis 9.93 EUR

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Preis ohne MwSt
HUF75631S3ST HUF75631S3ST Hersteller : onsemi / Fairchild HUF75631S3S_D-2314467.pdf MOSFET 100V NCh PowerMOSFET UltraFET
auf Bestellung 416 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+8.35 EUR
10+ 7.36 EUR
25+ 7.18 EUR
100+ 6.34 EUR
250+ 6.19 EUR
500+ 5.88 EUR
800+ 5.02 EUR
Mindestbestellmenge: 7
HUF75631S3ST HUF75631S3ST Hersteller : onsemi huf75631s3s-d.pdf Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 33A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
auf Bestellung 459 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.93 EUR
10+ 8.35 EUR
100+ 6.76 EUR
Mindestbestellmenge: 3
HUF75631S3ST HUF75631S3ST Hersteller : ON Semiconductor 3937744841948661huf75631s3s-d.pdf Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
HUF75631S3ST HUF75631S3ST Hersteller : onsemi huf75631s3s-d.pdf Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 33A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
Produkt ist nicht verfügbar